Low-frequency excess noise induced by hot-carrier injection in polysilicon thin-film transistors

被引：1

作者：

Bove, A ^{[1
]}

Giovannini, S ^{[1
]}

Valetta, A ^{[1
]}

Mariucci, L ^{[1
]}

Pecora, A ^{[1
]}

Fortunato, G ^{[1
]}

机构：

[1] CNR, IESS, I-00156 Rome, Italy

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

polycrystalline silicon; thin-film transistors; noise;

D O I：

10.1016/S0040-6090(00)01587-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-frequency noise has been investigated in self-aligned (SA) and gate overlapped lightly doped drain (GOLDD) polysilicon thin-film transistors (TFTs). We found that, at low V-ds both device structures are characterised by 1/f noise, originating from carrier number fluctuations. However, when the SA devices were operated in the kink regime, an excess noise was observed, in contrast to GOLDD TFTs. This has been explained by attributing the excess noise to supplemental oxide charge fluctuations induced by hot-carrier injection into the gate oxide. By using two-dimensional numerical simulations, we show that the hot-electron emission current in SA polysilicon TFTs is much higher than in the GOLDD structure. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：147 / 150

页数：4

共 6 条

[1]

AYRES JR, 1998, JPN J APPL PHYS, V37, P1908

[2] Noise performances in polycrystalline silicon thin-film transistors fabricated by excimer laser crystallization [J].