The fabrication of devices in silicon using scanning probe microscopy

被引：0

作者：

Ruess, RJ ^{[1
]}

Oberbeck, L ^{[1
]}

Simmons, MY ^{[1
]}

Goh, KEJ ^{[1
]}

Hamilton, AR ^{[1
]}

Hallam, T ^{[1
]}

Curson, NJ ^{[1
]}

Clark, RG ^{[1
]}

机构：

[1] Univ New S Wales, Sch Phys, Australian Res Council Ctr Excellence Quantum Com, Sydney, NSW 2052, Australia

来源：

Smart Structures, Devices, and Systems II, Pt 1 and 2 | 2005年 / 5649卷

关键词：

Scanning Probe Microscopy (SPM); quantum wire; nanoelectronics; nanotechnology; weak localization;

D O I：

10.1117/12.582283

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

Over the last three years we have demonstrated key milestones in the fabrication of buried nano-scale devices in silicon using an ultra-high vacuum scanning tunnelling microscope (STM) and silicon molecular beam epitaxy (MBE). Recently we have achieved the final step of connecting the STM-patterned buried phosphorus devices to the outside world to perform electrical measurements. The results of our low temperature magnetotransport measurements highlight the potential of this approach for the creation of atomic-scale devices.

引用

页码：306 / 310

页数：5

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