A 120-W boost converter operation using a high-voltage GaN-HEMT

被引：103

作者：

Saito, Wataru ^{[1
]}

Nitta, Tomohiro ^{[1
]}

Kakiuchi, Yorito ^{[1
]}

Saito, Yasunobu ^{[1
]}

Tsuda, Kunio ^{[2
]}

Omura, Ichiro ^{[1
]}

Yamaguchi, Masakazu ^{[1
]}

机构：

[1] Semicond Co, Toshiba Corp, Kawasaki, Kanagawa 2128583, Japan

[2] Toshiba Res & Dev Ctr, Kawasaki, Kanagawa 2128583, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期

关键词：

GaN; HEMT; high voltage; power semiconductor device;

D O I：

10.1109/LED.2007.910796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena.

引用

页码：8 / 10

页数：3

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