Novel large-coupled optical cavity semiconductor lasers and multi-active region light-emitting diodes with high performance

被引：9

作者：

Shen, GD ^{[1
]}

Lian, P ^{[1
]}

Guo, X ^{[1
]}

Yin, T ^{[1
]}

Chen, CG ^{[1
]}

Wang, GH ^{[1
]}

Du, JY ^{[1
]}

Cui, BF ^{[1
]}

Li, JJ ^{[1
]}

Liu, Y ^{[1
]}

Gao, G ^{[1
]}

Zou, DS ^{[1
]}

Chen, JX ^{[1
]}

机构：

[1] Beijing Polytech Univ, Dept Elect Engn, Beijing 100022, Peoples R China

来源：

OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS | 2000年 / 4225卷

关键词：

semiconductor laser; LED; multi-active region; high efficiency;

D O I：

10.1117/12.402741

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Novel multi-active region semiconductor lasers with large coupled optical cavity and high quantum efficiency, and new mechanism tunneling-regenerated multi-active region light emitting diodes with high quantum efficiency and high brightness have been proposed and fabricated. The external and differential quantum efficiency are 2.9 and 3.0W/A, and the output light power as high as similar to 5W when the injecting current equals 2A for the four active region 980nm strained InGaAs/GaAs QW lasers. The fundamental mode light output with perpendicular angle less than or equal to 17 degrees for this type of large coupled optical cavity laser has been achieved. The on-axis luminous intensity of the new mechanism 620nm AlGaInP/AlInP LEDs with two active regions is more than 5 cd. It was theoretically and experimentally resulted in that the electro-luminescence efficiency and the on-axis luminous intensity are linearly increasing approximately with the number of the active regions.

引用

页码：327 / 330

页数：4