Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth

被引：11

作者：

Shimura, Takayoshi ^{[1
]}

Ogiwara, Shimpei ^{[1
]}

Yoshimoto, Chiaki ^{[1
]}

Hosoi, Takuji ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Dept Mat & Life Sci, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 10期

关键词：

DIFFUSION; SUBSTRATE; GERMANIUM;

D O I：

10.1143/APEX.3.105501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the fabrication of high-quality fully relaxed SiGe layers on a silicon-on-insulator (SOI) substrate by rapid melt growth. A compositional gradient and crystallographic defects are confined to a region between the relaxed SiGe and residual SOI layers. The degradation of surface roughness during rapid thermal annealing is suppressed by the capping SiO2 layer. The growth mechanism is discussed based on the phase diagram of the Si-Ge system and the depth profile of the Ge concentration. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

共 4 条

[1] Selective-Area Growth of Ge and Ge/SiGe Quantum Wells in 3 μm Silicon-on-Insulator Waveguides
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MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2024, 302
[4] Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth
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Zhang, D. L.
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Zhou, T. W.
Xue, C. L.
Zuo, Y. H.
Li, C. B.
Wang, Q. M.
Cheng, B. W.
ECS SOLID STATE LETTERS, 2014, 3 (07) : Q33 - Q35

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