Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium

被引：72

作者：

Yeo, YC ^{[1
]}

Lu, Q ^{[1
]}

King, TJ ^{[1
]}

Hu, CM ^{[1
]}

Kawashima, T ^{[1
]}

Oishi, M ^{[1
]}

Mashiro, S ^{[1
]}

Sakai, J ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the demonstration of a novel sub-100 nm CMOS technology with strained-Si0.76Ge0.24/Si hetero structure channels formed by ultra-high-vacuum chemical-vapor-deposition (UHV-CVD). The incorporation of 24% Ge in the channel provides a 25% enhancement in PMOSFET drive current for channel lengths down to 0.1 mum. Enhancement in NMOSFET drive current is concomitantly observed for channel lengths below 0.4 mum.

引用

页码：753 / 756

页数：4

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