Lattice thermal conductivity of group-IV and III-V semiconductor alloys

被引：112

作者：

Adachi, Sadao ^{[1
]}

机构：

[1] Gunma Univ, Fac Engn, Dept Elect Engn, Gunma 3768515, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 06期

关键词：

D O I：

10.1063/1.2779259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room-temperature thermal conductivity of semiconductor alloys is analyzed using a simplified model of the alloy-disorder scattering. Good agreement is achieved between the present model and published experimental data on various group-IV and III-V semiconductor alloys. A complete set of alloy-disorder parameters are estimated, which makes it possible to calculate the lattice thermal conductivity for optional composition of III-V semiconductor alloys, including III-N alloys. An ordering effect is also examined for the explanation of some intermetallic and semiconductor compounds like CuAu and SiC.(C) 2007 American Institute of Physics.

引用

页数：7

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