Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs

被引：6

作者：

Katada, Ryunosuke ^{[1
]}

Hata, Katsuhiro ^{[1
]}

Yamauchi, Yoshitaka ^{[1
]}

Wang, Ting-Wei ^{[1
,2
]}

Morikawa, Ryuzo ^{[1
]}

Wu, Cheng-Hsuan ^{[1
]}

Sail, Toru ^{[1
]}

Chen, Po-Hung ^{[2
]}

Takamiya, Makoto ^{[1
]}

机构：

[1] Univ Tokyo, Tokyo, Japan

[2] Natl Chiao Tung Univ, Hsinchu, Taiwan

来源：

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2021年

关键词：

digital gate drive; GaN FET; switching loss; overshoot; DRIVER;

D O I：

10.1109/ECCE47101.2021.9595264

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

In this paper, a problem of huge voltage overshoots (V-OVERSHOOT) of V-DS in GaN FETs, which rarely happens during an automatic search of optimum gate driving parameters in a digital gate driving (DGD), is clarified for the first time, and a solution to avoid the problem is proposed. The highest V-OVERSHOOT in 165k measurements, where parameters of 6-bit DGD IC in 6 time slots in 3.3-ns time intervals are randomly changed in the turn-off of GaN FET at 20 V and 10 A, is 27.6 V, which is 115 % larger than the conventional single-step gate driving (CSG) and is almost equal to the maximum rated voltage of the GaN FET. To solve the problem, a safe and fast search method of optimum parameters for DGD is proposed, which achieved 61 % reduction of the switching loss and 59 % reduction of V-OVERSHOOT compared with CSG.

引用

页码：5412 / 5416

页数：5

共 8 条

[1]

[Anonymous], DAT SHEET EPC2030

[2] CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors [J].