Balanced-Bridge Method for the Characterization of Dielectric Charging in RF MEMS Cantilever Switches

被引:5
作者
Yan, Hao [1 ]
Liao, Xiaoping [2 ]
机构
[1] Southeast Univ, Natl ASIC Res Ctr, Nanjing 210096, Peoples R China
[2] Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing 210096, Peoples R China
基金
中国国家自然科学基金;
关键词
Capacitive switch; dielectric charging; polarization; balanced-bridge; reliability; FIELD-EMISSION; CONTACTLESS; INJECTION;
D O I
10.1109/JSEN.2019.2950104
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a balanced-bridge method for the characterization of dielectric charging effect in RF MEMS (radio frequency micro-electromechanical system) cantilever switches. The method measures the relative change of up-state capacitance caused by dielectric charging. Compared with previous methods, this approach employs simple and inexpensive test equipment. The test system consists of two symmetric capacitive switches, two adjustable resistors, a function generator, and a voltmeter. Measurement results indicate that it can achieve a resolution of 0.1 fF/Omega. By this test system, the slight variation of up-state capacitance can be converted to the significant change of the resistance. Analysis of the experimental data shows that dielectric charging under the DC-voltage stress mainly occurs in the first 1200 seconds. The mechanisms resulting in capacitance variation can be divided into two groups: dielectric polarization and charge injection. Moreover, in contrast to the DC voltage, the RF signal does not have a significant influence on the charging process.
引用
收藏
页码:1928 / 1933
页数:6
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