共 18 条
- [3] Hansen R. L., Surface-treated crucibles for improved zero dislocation performance, Patent No. [US005976247A, 005976247]
- [4] HANSEN RL, Patent No. 5980629
- [5] Analysis of an oxygen dissolution process concerning Czochralski (CZ) Si crystal growth using the sessile drop method [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (2B): : L193 - L195
- [7] In situ observation of the interfacial phase formation at Si melt/silica glass interface [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (6A): : 3281 - 3285
- [9] In situ observation of etching processes of silica glasses by silicon melts [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (6A): : 3547 - 3552