共 18 条
[3]
Hansen R. L., Surface-treated crucibles for improved zero dislocation performance, Patent No. [US005976247A, 005976247]
[4]
HANSEN RL, Patent No. 5980629
[5]
Analysis of an oxygen dissolution process concerning Czochralski (CZ) Si crystal growth using the sessile drop method
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1998, 37 (2B)
:L193-L195
[7]
In situ observation of the interfacial phase formation at Si melt/silica glass interface
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
2000, 39 (6A)
:3281-3285
[9]
In situ observation of etching processes of silica glasses by silicon melts
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1996, 35 (6A)
:3547-3552