Analysis of the reaction at the interface between Si melt and Ba-doped silica glass

被引:13
作者
Huang, Xinming [1 ]
Hoshikawa, Takeshi [1 ]
Uda, Satoshi [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
关键词
ba doping; crystallization; CZ-Si crystal growth; brownish ring; cristobalite; silica;
D O I
10.1016/j.jcrysgro.2007.05.020
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In order to elucidate the effects of Ba doping in a silica crucible used for growing Czochralski Si (CZ-Si) crystals, in situ observations and differential scanning calorimetry (DSC) measurements were employed for investigating the reaction at the interface between the Si melt and the Ba-doped silica glass. It was found that the generation of a so-called brownish ring was suppressed completely by Ba doping when the Ba concentration in the silica glass was higher than 30 ppm. Ba doping in the silica glass increased the formation rate of white cristobalite crystallized by phase transition directly from the silica glass, which counteracted the growth of the brownish rings and suppressed their amount. A decrease in the activation energy for the crystallization of cristobalite by Ba doping was verified by means of the DSC measurements, which caused an increase in the growth rate of the white cristobalite. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:422 / 427
页数:6
相关论文
共 18 条
  • [1] A STUDY OF THE MECHANISMS INVOLVED DURING DISSOLUTION OF SILICA IN LIQUID SILICON
    EKHULT, U
    CARLBERG, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (12) : 3809 - 3812
  • [2] TRANSMISSION ELECTRON-MICROSCOPE STUDY OF QUARTZ CRUCIBLES USED IN GROWTH OF CZOCHRALSKI SILICON
    FRAUNDORF, GK
    SHIVE, L
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 102 (1-2) : 157 - 166
  • [3] Hansen R. L., Surface-treated crucibles for improved zero dislocation performance, Patent No. [US005976247A, 005976247]
  • [4] HANSEN RL, Patent No. 5980629
  • [5] Analysis of an oxygen dissolution process concerning Czochralski (CZ) Si crystal growth using the sessile drop method
    Huang, XM
    Saitou, K
    Sakai, S
    Terashima, K
    Hoshikawa, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (2B): : L193 - L195
  • [6] FORMATION OF INTERFACIAL PHASES BETWEEN SILICA AND UNDOPED OR ANTIMONY-DOPED SILICON MELTS
    HUANG, XM
    TERASHIMA, K
    ANZAI, Y
    TOKIZAKI, E
    SASAKI, H
    KIMURA, S
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (17) : 2261 - 2263
  • [7] In situ observation of the interfacial phase formation at Si melt/silica glass interface
    Huang, XM
    Wang, TF
    Yamahara, K
    Taishi, T
    Hoshikawa, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (6A): : 3281 - 3285
  • [8] Reaction at the interface between Si melt and a Ba-doped silica crucible
    Huang, XM
    Koh, SJ
    Wu, KH
    Chen, MW
    Hoshikawa, T
    Hoshikawa, K
    Uda, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 277 (1-4) : 154 - 161
  • [9] In situ observation of etching processes of silica glasses by silicon melts
    Ikari, A
    Matsuo, S
    Terashima, K
    Kimura, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (6A): : 3547 - 3552
  • [10] Evolution of cristobalite clusters on silica glass surfaces in molten silicon
    Imai, H
    Hirashima, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (03) : 1182 - 1185