Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

被引：25
作者：
Zavada, J. M. [1 ]
Nepal, N.
Ugolini, C.
Lin, J. Y.
Jiang, H. X.
Davies, R.
Hite, J.
Abernathy, C. R.
Pearton, S. J.
Brown, E. E.
Hoemmerich, U.
机构：
[1] USA Res Off, Div Elect, Durham, NC 27709 USA
[2] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[4] Hampton Univ, Dept Phys, Hampton, VA 23668 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期
关键词：
D O I：
10.1063/1.2767992
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report on the optical and magnetic properties of GaN epilayers, grown by metal-organic chemical vapor deposition, with in situ Er doping at concentrations up to similar to 10(21) cm(-3). Using ultraviolet laser excitation, all samples exhibited photoluminescence near 1540 nm with the integrated intensity approximately proportional to the Er concentration. Data from superconducting quantum interference device measurements indicated room temperature ferromagnetic ordering in all Er-doped GaN epilayers. The saturation magnetization in these samples also followed a nearly linear fit to the Er concentration. X-ray diffraction spectra did not reveal evidence of any second phases over this range of Er concentrations.
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