Transparent electrode is the key component of optoelectronic devices. Nowadays, indium tin oxide (ITO) has been widely used for transparent electrode. However, Ag nanowires (NWs) are a good alternative candidate to replace the conventional ITO. In order to improve the stability of silver nanowires electrode, ZnO with nanometer size thickness is deposited on the surface of silver nanowires electrode by atomic layer deposition (ALD) method which is a method of depositing material on a substrate layer by layer in the form of a single atomic film. As the surface of the nanowires are coated with ZnO, the overall morphology is good without fusing phenomenon. The thermal stability of the silver nanowires electrode can be significantly enhanced by depositing 50 nm thickness ZnO layer including the sheet resistances.
机构:
Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China
Univ Nova Gorica, Lab Organ Matter Phys, SI-5000 Nova Gorica, SloveniaUniv Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China
Pastukhova, Nadiia
Mavric, Andraz
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Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China
Univ Nova Gorica, Mat Res Lab, SI-5000 Nova Gorica, SloveniaUniv Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China
Mavric, Andraz
Li, Yanbo
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Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R ChinaUniv Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China
机构:
Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
Shin, Seokyoon
Ham, Giyul
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Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
Ham, Giyul
Jeon, Heeyoung
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Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
Jeon, Heeyoung
Park, Jingyu
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Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
Park, Jingyu
Jang, Woochool
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Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
Jang, Woochool
Jeon, Hyeongtag
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Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South KoreaHanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
Jeon, Hyeongtag
KOREAN JOURNAL OF MATERIALS RESEARCH,
2013,
23
(08):
: 405
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422