Photovoltage formation across Si p-n junction exposed to laser radiation

被引：3

作者：

Asmontas, Steponas ^{[1
]}

Gradauskas, Jonas ^{[1
]}

Suziedelis, Algirdas ^{[1
]}

Silenas, Aldis ^{[1
]}

Sirmulis, Edmundas ^{[1
]}

Svedas, Vitas ^{[1
]}

Vaicikauskas, Viktoras ^{[1
]}

Vaiciunas, Vytautas ^{[1
]}

Zalys, Ovidijus ^{[1
]}

Kostylyov, Vitaliy ^{[2
]}

机构：

[1] Ctr Phys Sci & Technol, Vilnius, Lithuania

[2] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, Kiev, Ukraine

来源：

MATERIALS SCIENCE-POLAND | 2018年 / 36卷 / 02期

关键词：

silicon; laser radiation; p-n junction; solar cell; hot carriers;

D O I：

10.1515/msp-2017-0106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photovoltage formation across Si p-n junction exposed to laser radiation is experimentally investigated. Illumination of the junction with 1.06 mu m wavelength laser radiation leads to formation of classical photovoltage U-ph due to intense electron-hole pair generation. When the photon energy is lower than the semiconductor forbidden energy gap, the photovoltage U is found to consist of two components, U = U-f + U-ph. The first U-f is a fast one having polarity of thermoelectromotive force of hot carriers. The second U-ph is classical photovoltage with polarity opposite to U-f. It is found that U-f is linearly dependent on laser intensity. The classical photovoltage is established to decrease with the rise of radiation wavelength due to decrease in two-photon absorption coefficient with wavelength. Predominance of each separate component in the formation of the net photovoltage depends on both laser wavelength and intensity.

引用

页码：337 / 340

页数：4

共 11 条

[1] Photovoltage formation across GaAs p-n junction under illumination of intense laser radiation [J].