Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs-(Ga,Al)As quantum wells -: art. no. 045316

被引：13
|
作者：
Reyes-Gómez, E
Oliveira, LE
de Dios-Leyva, M
机构：
[1] UNICAMP, Inst Fis, BR-13083970 Campinas, SP, Brazil
[2] Univ Havana, Dept Theoret Phys, Havana 10400, Cuba
来源：
PHYSICAL REVIEW B | 2005年 / 71卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.71.045316
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs-(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs-(Ga,Al)As quantum wells.
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页数：7
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