Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

被引：339

作者：

Yu, Shimeng ^{[1
]}

Guan, Ximeng ^{[1
]}

Wong, H. -S. Philip ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 06期

基金：

美国国家科学基金会;

关键词：

HFO2; THIN-FILMS; CURRENT TRANSPORT; OXIDE;

D O I：

10.1063/1.3624472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction mechanism of metal oxide resistive switching memory is debated in the literature. We measured the I-V characteristics below the switching voltages through TiN/HfOx/Pt memory stack and found the conduction cannot be described by the commonly used Poole-Frenkel model, because the fitted dielectric constant and the trap energy are unreasonable as compared to their known values. Therefore, we provide an alternate viewpoint based on a trap-assisted-tunneling model. Agreement of the bias polarity/temperature/resistance state-dependent conduction behavior was achieved between this model and experimental data. And insights for the multilevel capability due to the control of tunneling distance were obtained. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3624472]

引用

页数：3

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