Tunable positive magnetoresistance and crossover from weak antilocalization to weak localization transition in half-Heusler compounds RPtBi (R=lanthanide)

被引：20

作者：

Chen, Jie ^{[1
,2
,3
]}

Li, Hang ^{[1
,2
,3
]}

Ding, Bei ^{[1
,2
,3
]}

Hou, Zhipeng ^{[4
]}

Liu, Enke ^{[1
,2
,5
]}

Xi, Xuekui ^{[1
,2
]}

Wu, Guangheng ^{[1
,2
]}

Wang, Wenhong ^{[1
,2
,5
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] South China Normal Univ, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China

[5] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 10期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

Magnetoresistance; -; Terbium;

D O I：

10.1063/1.5143990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of large tunable positive magnetoresistance (MR) effects in magnetic lanthanide half-Heusler compounds RPtBi (R=Tb, Dy, Ho, Er, and Tm). The value of MR shows a great enhancement from 41% to 1740% by replacing R from Tb to Tm at 2K under a magnetic field of 9T. Moreover, a transition of MR from weak antilocalization to weak localization is clearly confirmed when the lanthanide R changed from Tm to Tb. We attribute this transition to gradually enhanced spin-dependent scattering in these magnetic lanthanide half-Heusler compounds RPtBi. Published under license by AIP Publishing.

引用

页数：4

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