The interface between single crystalline (001) LaAlO3 and (001) silicon

被引：53
作者：
Klenov, DO [1 ]
Schlom, DG
Li, H
Stemmer, S
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[3] Motorola Inc, Microelect & Phys Sci Lab, Tempe, AZ 85284 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 20-23期
关键词：
high-angle annular dark-field imaging; high-k gate dielectrics; oxide/semiconductor interfaces; scanning transmission electron microscopy;
D O I：
10.1143/JJAP.44.L617
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomic resolution high-angle annular dark-field imaging in scanning transmission electron microscopy is used to determine atomic arrangements at LaAlO3/Si interfaces, which were obtained by growing Si films epitaxially on (001) LaAlO3 single crystals. An unusual 3 x 1 interface reconstruction, in which every third La column is removed from the interface plane, is observed. The interface atomic structure is discussed in the context of electrically favorable interfacial bonding between the ionic oxide and Si.
引用
收藏
页码：L617 / L619
页数：3
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