High Mobility III-V-On-Insulator MOSFETs on Si with ALD-Al2O3 BOX layers

被引：14

作者：

Yokoyama, M. ^{[1
]}

Urabe, Y. ^{[2
]}

Yasuda, T. ^{[2
]}

Takagi, H. ^{[2
]}

Ishii, H. ^{[2
]}

Miyata, N. ^{[2
]}

Yamada, H. ^{[3
]}

Fukuhara, N. ^{[3
]}

Hata, M. ^{[3
]}

Sugiyama, M. ^{[1
]}

Nakano, Y. ^{[1
]}

Takenaka, M. ^{[1
]}

Takagi, S. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Sumitomo Chem Co Ltd, Tsukuba, Ibaraki, Japan

来源：

2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2010年

关键词：

D O I：

10.1109/VLSIT.2010.5556241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully demonstrated III-V-semiconductor-on-insulator (III-V-OI) MOSFETs with ALD-Al2O3 buried oxide (BOX) layers under front-gate operation, for the first time. The high electron mobilities of similar to 3000 and similar to 2000 cm(2)/Vs were achieved for i-InGaAs and p-InGaAs channels, respectively, formed on Al2O3/Si. Also, we have found that the InGaAs-OI channel bottom condition (the InGaAs-OI/BOX interface) is quite important for the device performance through improvements by adapting ALD-Al2O3 and S passivation, resulting in high electron mobility of similar to 4000 cm(2)/Vs under back-gate operation.

引用

页码：235 / +

页数：2

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