Charge transport study of P3HT blended MoS2

被引：13

作者：

Tiwari, Surya Prakash ^{[1
,2
]}

Verma, Ritu ^{[2
]}

Alam, Md Bayazeed ^{[2
]}

Kumari, Reena ^{[2
]}

Sinha, O. P. ^{[3
]}

Srivastava, Ritu ^{[2
]}

机构：

[1] CSIR, Natl Phys Lab, Acad Sci & Innovat Res, New Delhi 110012, India

[2] CSIR, Natl Phys Lab, Adv Mat & Devices Div, New Delhi 110012, India

[3] Amity Univ, Amity Inst Nanotechnol, Noida 201303, UP, India

来源：

VACUUM | 2017年 / 146卷

关键词：

Charge transport study; P3HT; MoS2; Mobility; AFM; Point defects; FIELD-EFFECT TRANSISTORS; ORGANIC ELECTRONICS; NANOPARTICLES; AGGREGATION; EXFOLIATION; DEVICES; SHEETS;

D O I：

10.1016/j.vacuum.2017.07.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hybrid organic inorganic hetero-structures, especially inorganic two-dimensional (2D) materials and organic semiconductors are attracting great attention for optoelectronic applications. The quantum confinement effects of 2D materials and their low-cost processing and high performance in devices enable a high degree of tunable optoelectronic properties for these heterostructure. Herein, we attempted to doped poly(3-hexylthiophene) (P3HT) with 2D nanosheets of Molybdenum sulfide (MoS2) to improve its mobility. We synthesized 2D MoS2 nanosheets using ultrasonication method for exfoliation of MoS2. The successful synthesis of 2D MoS2 monolayers is evidenced through substantial characterization viz Atomic Force Microscopy and UV-visible Spectroscopy. The thickness of these nanosheets varies between 8 and 10 nm. The doping of MoS2 significantly improved the mobility of the P3HT as evident from the enhanced drain current of organic field effect transistors (OFET) as compared to the undoped P3HT. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：474 / 477

页数：4

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