Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

被引：23

作者：

Chen, Yuting ^{[1
,2
]}

Yang, Yang ^{[1
,2
]}

Yuan, Peng ^{[1
,2
]}

Jiang, Pengfei ^{[1
,2
]}

Wang, Yuan ^{[1
,2
]}

Xu, Yannan ^{[1
,2
]}

Lv, Shuxian ^{[1
,2
]}

Ding, Yaxin ^{[1
,2
]}

Dang, Zhiwei ^{[1
,2
]}

Gao, Zhaomeng ^{[1
,2
]}

Gong, Tiancheng ^{[1
,2
]}

Wang, Yan ^{[1
,2
]}

Luo, Qing ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Peng Cheng Lab, Dept Math & Theories, 2,Xingke 1st St, Shenzhen 518000, Peoples R China

来源：

NANO RESEARCH | 2022年 / 15卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ferroelectric; Hf0.5Zr0.5O2 (HZO); Al2O3 buffer layer; flexible; NONVOLATILE MEMORY; CAPACITORS; POLYMER; FUTURE; SKIN;

D O I：

10.1007/s12274-021-3896-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Flexible memory devices are promising for information storage and data processing applications in portable, wearable, and smart electronics operating under curved conditions. In this work, we realized high-performance flexible ferroelectric capacitors based on Hf0.5Zr0.5O2 (HZO) thin film by depositing a buffer layer of Al2O3 on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible ferroelectric HZO films exhibit high remnant polarization (P-r) of 21 mu C/cm(2). Furthermore, deterioration of polarization, retention, and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending cycles. This work marks a critical step in the development of high-performance flexible HfO2-based ferroelectric memories for next-generation wearable electronic devices.

引用

页码：2913 / 2918

页数：6

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