Temperature dependence of the barrier height of Pt/n-GaAs Schottky diodes

被引：0

作者：

Hübers, HW ^{[1
]}

Röser, HP ^{[1
]}

机构：

[1] Inst Space Sensor Technol, German Aerosp Ctr, D-12489 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 09期

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D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence on temperature of the Schottky barrier height of Pt on n-GaAs is reported. Two different behaviors are observed. The Schottky contacts of one group have a mean barrier height of 1.018 eV and a temperature coefficient of -0.23 meV/K while the contacts of the other group have a significantly lower barrier height of 0.922 eV which is almost independent of the: temperature. These results are interpreted on the basis of recent models of Fermi level pinning. While the Fermi level in the diodes of the first group is pinned to a charge neutrality level? it is pinned by defects in the diodes of the second group. (C) 1998 American Institute of Physics. [S0021-8979(98)02021-0].

引用

页码：5326 / 5330

页数：5

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