W-band Synthesized Modulator and Demodulator with Wideband Performance in 65-nm CMOS

被引：0
作者：
Zheng, Zhenpeng [1 ]
Meng, Xiangyu [1 ]
Zhang, Jiaqi [1 ]
Zhou, Mo [1 ]
Chen, Dihu [1 ]
机构：
[1] Sun Yat Sen Univ, SEIT, Guangzhou, Peoples R China
来源：
2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2020年
基金：
中国国家自然科学基金;
关键词：
modulator; demodulator; CMOS; W-band;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high image-rejection in-phase/quadrature (IQ) modulator and a wideband demodulator with large dynamic range operating in W-band is implemented in 65-nm CMOS technology. The modulator demonstrates a flat conversion gain of 12.5 +/- 0.7dB, a minimum image-rejection ratio of 40 dBc and a maximum LO-to-RF leakage of 38 dB from 90 to 98 GHz. The conversion gain of the demodulator is digitally controlled from 15 to 46 dB with a noise figure from 13.5 to 11.5 dB and an input 1dB compression point (IP1dB) from-13 to-39 dBm. The modulator and the demodulator are synthesized by two on-chip single-pole-double-throw (SPDT) switches and one IF switch. The entire system occupies 1.4 mm(2) chip area with a total power consumption of 165 mW.
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页数：4
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