W-band Synthesized Modulator and Demodulator with Wideband Performance in 65-nm CMOS

被引：0

作者：

Zheng, Zhenpeng ^{[1
]}

Meng, Xiangyu ^{[1
]}

Zhang, Jiaqi ^{[1
]}

Zhou, Mo ^{[1
]}

Chen, Dihu ^{[1
]}

机构：

[1] Sun Yat Sen Univ, SEIT, Guangzhou, Peoples R China

来源：

2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2020年

基金：

中国国家自然科学基金;

关键词：

modulator; demodulator; CMOS; W-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high image-rejection in-phase/quadrature (IQ) modulator and a wideband demodulator with large dynamic range operating in W-band is implemented in 65-nm CMOS technology. The modulator demonstrates a flat conversion gain of 12.5 +/- 0.7dB, a minimum image-rejection ratio of 40 dBc and a maximum LO-to-RF leakage of 38 dB from 90 to 98 GHz. The conversion gain of the demodulator is digitally controlled from 15 to 46 dB with a noise figure from 13.5 to 11.5 dB and an input 1dB compression point (IP1dB) from-13 to-39 dBm. The modulator and the demodulator are synthesized by two on-chip single-pole-double-throw (SPDT) switches and one IF switch. The entire system occupies 1.4 mm(2) chip area with a total power consumption of 165 mW.

引用

页数：4

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