Lowering of crystallization temperature of sol-gel derived Pb(Zr,Ti)O3 thin films

被引：15

作者：

Maki, K

Soyama, N

Mori, S

Ogi, K

机构：

[1] Mitsubishi Mat Corp, Dev Sect, Sanda Plant, Sanda, Hyogo 6691339, Japan

[2] Mitsubishi Mat Corp, Cent Res Inst, Omiya, Saitama 3308508, Japan

来源：

INTEGRATED FERROELECTRICS | 2000年 / 30卷 / 1-4期

关键词：

PZT; film; sol-gel low temperature; crystallization; stress;

D O I：

10.1080/10584580008222268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the low temperature preparation of sol-gel derived Pb(Zr0.4Ti0.6)O-3 thin films on Pt/SiO2/Si substrates. we found that new stable sol-gel solutions and the modified film preparation processes were effective in lowering the crystallization temperature. The film processed at 450 degreesC from the new solution had better ferroelectric properties than the films from other conventional solutions. Thinning of the annealed film (thin film annealing) and piling of the annealed thin films (multi-annealing) were especially effective in lowering the crystallization temperature, as compared with the conventional preparation process of annealing of piled amorphous films (single-annealing). The combination of the new solution and the modified film preparation processes enabled PZT film to crystallize at 435 degreesC and PZT film crystallized at 450 degreesC to have good ferroelectric properties. And we discussed the mechanism of nucleation and grain growth of PZT films. which were connected with the stress.

引用

页码：193 / 202

页数：10

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