Stark effect of negatively and positively charged excitons in semiconductor quantum wells

被引：4
|
作者：
Shields, AJ
Osborne, JL
Simmons, MY
Whittaker, DM
Bolton, FM
Ritchie, DA
Pepper, M
机构：
[1] Toshiba Cambridge Res Ctr, Cambridge CB4 4WE, England
[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 1998年 / 2卷 / 1-4期
关键词：
charged excitons; trions; quantum wells; electric fields;
D O I：
10.1016/S1386-9477(98)00020-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the effect of an electric field applied normal to the layers on the binding energy of charged excitons (or trions) in GaAs quantum wells. We find that, in contrast to the neutral exciton, their binding energy is sharply reduced by modest electric fields. The effect is stronger for the positively charged exciton than the negatively charged one. The ionisation of the excess carrier is explained by the field-induced polarisation of the electron and hole subband wave functions. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：87 / 92
页数：6
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