Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

被引：3

作者：

Weidlich, P. H. ^{[1
]}

Schnedler, M. ^{[1
]}

Portz, V. ^{[1
]}

Eisele, H. ^{[2
]}

Strauss, U. ^{[3
]}

Dunin-Borkowski, R. E. ^{[1
]}

Ebert, Ph ^{[1
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] OSRAM Optosemicond GmbH, D-93055 Regensburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 03期

关键词：

EPITAXIAL LATERAL OVERGROWTH; TRANSMISSION ELECTRON-MICROSCOPY; THREADING DISLOCATIONS; FORCE MICROSCOPY; SURFACE; DEFECTS; FIELDS; EDGE; DISPLACEMENT; HOLOGRAPHY;

D O I：

10.1063/1.4926789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A methodology for the determination of the subsurface line direction of dislocations using scanning tunneling microscopy (STM) images is presented. The depth of the dislocation core is derived from an analysis of the displacement field measured by STM. The methodology is illustrated for dislocations at GaN(10 (1) over bar0) cleavage surfaces. It is found that the dislocation line bends toward the surface, changing from predominantly edge-type to more screw-type character, when approaching the intersection point. Simultaneously, the total displacement detectable at the surface increases due to a preferred relaxation towards the surface. (C) 2015 AIP Publishing LLC.

引用

页数：6

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