A phonon scattering assisted injection and extraction based terahertz quantum cascade laser

被引：62
作者：
Dupont, E. [1 ]
Fathololoumi, S. [1 ,2 ]
Wasilewski, Z. R. [1 ]
Aers, G. [1 ]
Laframboise, S. R. [1 ]
Lindskog, M. [3 ]
Razavipour, S. G. [2 ]
Wacker, A. [3 ]
Ban, D. [2 ]
Liu, H. C. [4 ]
机构：
[1] CNR, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] Univ Waterloo, Waterloo Inst Nanotechnol, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
[3] Lund Univ, Div Math Phys, S-22100 Lund, Sweden
[4] Shanghai Jiao Tong Univ, Dept Phys, Key Lab Artificial Struct & Quantum Control, Shanghai 200240, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期
基金：
加拿大自然科学与工程研究理事会;
关键词：
INTERFACE-ROUGHNESS; TRANSPORT;
D O I：
10.1063/1.3702571
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A lasing scheme for terahertz quantum cascade lasers, based on consecutive phonon-photon-phonon emissions per module, is proposed and experimentally demonstrated. The charge transport of the proposed structure is modeled using a rate equation formalism. An optimization code based on a genetic algorithm was developed to find a four-well design in the GaAs/Al0.25Ga0.75As material system that maximizes the product of population inversion and oscillator strength at 150 K. The fabricated devices using Au double-metal waveguides show lasing at 3.2 THz up to 138 K. The electrical characteristics display no sign of differential resistance drop at lasing threshold, which, in conjunction with the low optical power of the device, suggest-thanks to the rate equation model-a slow depopulation rate of the lower lasing state, a hypothesis confirmed by non-equilibrium Green's function calculations. [http://dx.doi.org/10.1063/1.3702571]
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页数：10
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