Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation

被引：11
作者：
Bishop, S. M. [1 ]
Bakhru, H. [1 ]
Capulong, J. O. [1 ]
Cady, N. C. [1 ]
机构：
[1] SUNY Albany, CNSE, Albany, NY 12203 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 14期
关键词：
Switching - Oxygen - Economic and social effects;
D O I：
10.1063/1.3701154
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resistive memory devices fabricated from oxygen implanted tantalum exhibited bipolar switching without a forming voltage. The influence of the current limit during SET on the switching properties has been studied using endurance measurements. The SET/RESET voltages did not change with the current limit. The RESET current increased proportionally to the SET current, while the on-state resistance varied inversely to the SET current. These results are consistent with a RESET process that is directly linked to the peak power during SET. The trade-off between the switching endurance and memory window that results from the SET process is also shown. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701154]
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页数：4
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