Thermoelectric properties of Quantum Dot-based devices

被引：0
|
作者：
Talbo, V. [1 ,2 ]
Dollfus, P. [1 ]
Saint-Martin, J. [1 ]
机构：
[1] Univ Paris Saclay, Univ Paris Sud, CNRS, Ctr Nanosci & Nanotechnol,C2N, F-91405 Orsay, France
[2] CEA, INAC PHELIQS, F-38000 Grenoble, France
来源：
2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2018年
关键词：
COULOMB-BLOCKADE;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor working in sequential regime are investigated using our homemade simulator that self-consistently couples the 3D Poisson, Schrodinger and Master equations. At high voltage bias, the multi-level effects are shown to induce non-linear characteristics of the heat current. Additionally, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.
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页数：4
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