Delayed bifurcations and negative hysteresis in semiconductor lasers: the role of initial conditions

被引：9

作者：

Choi, SH ^{[1
]}

White, E ^{[1
]}

Wood, DM ^{[1
]}

Dodson, T ^{[1
]}

Vasavada, KV ^{[1
]}

Vemuri, G ^{[1
]}

机构：

[1] Indiana Univ Purdue Univ, Dept Phys, Indianapolis, IN 46202 USA

来源：

OPTICS COMMUNICATIONS | 1999年 / 160卷 / 4-6期

关键词：

D O I：

10.1016/S0030-4018(98)00665-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The dynamical intensity response of a semiconductor laser under the influence of injection current modulation, and the resulting hysteresis behavior, is investigated experimentally and theoretically. We report the first experimental observation, in a semiconductor laser, of the transition from a negative to a positive hysteresis as the modulation frequency of the injection current is varied. The theoretical work isolates the initial conditions on the intrinsic laser parameters as the sole determinant in influencing the kind of hysteresis one observes. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：261 / 267

页数：7

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