Chemical solution techniques for epitaxial growth of oxide buffer and YBa2Cu3O7 films

被引：14

作者：

Cavallaro, A ^{[1
]}

Castaño, O ^{[1
]}

Palau, A ^{[1
]}

González, JC ^{[1
]}

Rossell, MD ^{[1
]}

Puig, T ^{[1
]}

Sandiumenge, F ^{[1
]}

Mestres, N ^{[1
]}

Piñol, S ^{[1
]}

Obradors, X ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat Barcelona, Catalonia 08193, Spain

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2004年 / 24卷 / 06期

关键词：

coated conductors; films; oxide superconductors; sol-gel processes;

D O I：

10.1016/S0955-2219(03)00448-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Chemical solution techniques have been investigated for the growth of both, oxide buffer layers suitable for coated conductors and YBa2Cu3O7 thin films, on single crystal substrates. Growth conditions have been optimised for CeO2 and BaZrO3 buffer layers, leading to high quality epitaxial films (misorientation spread typically below 1degrees). YBa2Cu3O7 films (thickness: 250 nm) have been grown from trifluoroacetate precursors. The kinetic hindrances for the formation of single phases have been investigated by means of Raman spectroscopy and fluorine analysis. After optimisation of the deposition and growth conditions very high critical currents have been achieved (J(c)(ab) = 3.2 x 10(6) A/cm(2) at 77 K and 2.7x 10(7)A/cm(2) at 5 K). (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1831 / 1835

页数：5

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