The effects of electron and hole transport layer with the electrode work function on perovskite solar cells

被引：37

作者：

Deng, Quanrong ^{[1
,2
]}

Li, Yiqi ^{[1
]}

Chen, Lian ^{[1
]}

Wang, Shenggao ^{[1
]}

Wang, Geming ^{[1
]}

Sheng, Yonglong ^{[2
]}

Shao, Guosheng ^{[2
]}

机构：

[1] Wuhan Inst Technol, Prov Key Lab Plasma Chem & Adv Mat, Wuhan 430073, Peoples R China

[2] Zhengzhou Univ, Int Joint Res Ctr Low Carbon & Environm Mat Henan, Zhengzhou 450001, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 2016年 / 30卷 / 27期

基金：

中国国家自然科学基金;

关键词：

Perovskite solar cells; simulation; electron transport layer; hole transport layer; electrode work function; PERFORMANCE; INTERFACE;

D O I：

10.1142/S0217984916503413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of electron and hole transport layer with the electrode work function on perovskite solar cells with the interface defects were simulated by using analysis of microelectronic and photonic structures-one-dimensional (AMPS-1D) software. The simulation results suggest that TiO2 electron transport layer provides best device performance with conversion efficiency of 25.9% compared with ZnO and CdS. The threshold value of back electrode work function for Spiro-OMeTAD, NiO, CuI and Cu2O hole transport layer are calculated to be 4.9, 4.8, 4.7 and 4.9 eV, respectively, to reach the highest conversion efficiency. The mechanisms of device physics with various electron and hole transport materials are discussed in details. The device performance deteriorates gradually as the increased density of interface defects located at ETM/absorber or absorber/HTM. This research results can provide helpful guidance for materials and metal electrode choice for perovskite solar cells.

引用

页数：10

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