Internal structure and oscillator strengths of excitons in strained alpha-GaN

被引：83
作者：
Gil, B
Briot, O
机构：
[1] Centre National del la Recherche Scientifique Groupe dșEtude des Semiconducteurs Universitéde Montpellier II, 34095 Montpellier Cedex 5
来源：
PHYSICAL REVIEW B | 1997年 / 55卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.55.2530
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We calculate the excitonic exchange interaction in alpha-GaN, and find it to be about 2 meV. A theoretical modelling of excitons is performed, and the oscillator strengths of radiative levels are calculated as a function of strain for (0001)-grown epilayers. In particular, we find that the strength of optical transitions are extremely sensitive to the residual strain field in view of the small value of the spin-orbit interaction. Our calculation shows agreement with low-temperature reflectance investigations in GaN epilayers grown on sapphire substrates.
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页码：2530 / 2534
页数：5
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