Surface modification and fabrication of 3D nanostructures by atomic layer deposition

被引:57
作者
Bae, Changdeuck [1 ]
Shin, Hyunjung [2 ]
Nielsch, Kornelius
机构
[1] Univ Hamburg, Inst Appl Phys, Hamburg, Germany
[2] Kookmin Univ, Seoul, South Korea
关键词
HIGH-KAPPA DIELECTRICS; NITRIDE INVERSE OPALS; OXIDE THIN-FILMS; CARBON NANOTUBES; AREA; TIO2; LITHOGRAPHY; TRANSISTORS; ARRAYS; GROWTH;
D O I
10.1557/mrs.2011.264
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Atomic layer deposition (ALD) not only presents a direct way to prepare nanomaterials when combined with templates, but also allows surface engineering to fine-tune the properties of the material. Here, we review recent progress in the field of nanostructured materials and devices that have been fabricated by ALD. Various materials, including semiconducting, magnetic, noble metallic, and insulating materials, can be used to form three-dimensional (3D), complex nanostructures with controlled composition and physical properties. We begin this review with ALD nanomaterials that can be prepared from porous templates with a 2D pore arrangement, such as anodic aluminum oxide, and advance toward opal structures with a 3D pore arrangement. We also discuss surface engineering by ALD on existing nanowires/nanotubes, devices, and chemical patterns that has the potential for application in high-performance transistors, sensors, and green energy conversion. Finally, we provide perspectives for future device applications that could arise from ALD nanomaterials.
引用
收藏
页码:887 / 897
页数:11
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