E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

被引：1

作者：

Moeller, M. ^{[1
]}

Dacal, L. C. O. ^{[1
,2
]}

de Lima, M. M., Jr. ^{[1
]}

Iikawa, F. ^{[3
]}

Chiaramonte, T. ^{[3
]}

Cotta, A. ^{[3
]}

Cantarero, A. ^{[1
]}

机构：

[1] Univ Valencia, Inst Ciencia Mat, Valencia, Spain

[2] CTA, Inst Estudos Avancados IEAv, Sao Jose Dos Campos, SP, Brazil

[3] Univ Estadual Campinas, Inst Fis Gleb Wataghin, Campinas, SP, Brazil

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

基金：

巴西圣保罗研究基金会;

关键词：

InAs; nanowire; wurtzite structure; Raman spectroscopy; E-1; gap;

D O I：

10.1063/1.3666459

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm(-1) reveals an E-1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

引用

页数：2

共 6 条

[1] EXCITONIC EFFECTS ON EPSILON1 AND EPSILON1+DELTA1 TRANSITIONS IN INAS [J].