Analysis of memristive nonlinear circuits

This article presents a substantial review of nonlinear memristive circuits based on Zdenek BIOLEK model alonside an innovator design developed within the Hewlett-Packard laboratories. HP realized a physical implementation of memristors by placing two layers of titanium dioxide between two electrodes. The first layer is partially doped with oxygen gaps and behaves like a semiconductor and the second layer of pure titanium dioxide acts as an insulating layer. Furthermore, this paper describes a possible use of memristors in logic gates construction, the analysis being carried out in LTSpice program using state equations and formulas describing the boundary effects. Two memristors connected in series having opposite polarities are used to implement the logic gates. Such devices are used in this case only to ensure the switching phenomenon and not to store logic states, similar to already existing CMOS logic circuits. The LTspice models of the memristor and memristive logic gates are designed in such a way that it enables easy modification of the nonlinear relations describing the boundary effects by changing the initial parameters. Hence memristors have a high potential for innovation in the electronics industrial applications, especially because these devices can remember the stored information even though they no longer have a voltage supply.