Deep levels in the band gap of CdTe films electrodepo sited from an acidic bath-PICTS analysis

被引：24

作者：

Mathew, X ^{[1
]}

Mathews, NR

Sebastian, PJ

Flores, CO

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco 62580, Morelos, Mexico

[2] Inst Mexicano Petr, Mexico City 07730, DF, Mexico

[3] Univ Nacl Autonoma Mexico, CCF, Cuernavaca 62251, Morelos, Mexico

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2004年 / 81卷 / 03期

关键词：

CdTe; electro deposition; PICTS; deep levels; electron and hole traps;

D O I：

10.1016/j.solmat.2003.11.015

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The deep traps detected in a CdTe thin film electrodeposited from an acidic bath are discussed. CdTe thin films were developed on flexible metallic substrates by electro deposition. The films were nearly stiochiometric, highly uniform and exhibit good crystallinity. The films were characterized using XRD, SEM, AUGER and AFM. The crystallites exhibited a strong preference for the (111) plane. The grain size of the film was in the range 0.2-0.4 mum. The photoinduced current transient spectroscopic technique was effectively used to identify the electron and hole traps. Two hole traps and one electron trap was detected. The activation energies of those deep traps were 0.37 and 0.42 eV for the hole traps and 0.41 eV for the electron trap. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：397 / 405

页数：9

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