Dual-band photodetectors based on interband and intersubband transitions

被引：11

作者：

Liu, HC ^{[1
]}

Song, CY

Shen, A

Gao, M

Dupont, E

Poole, PJ

Wasilewski, ZR

Buchanan, M

Wilson, PH

Robinson, BJ

Thompson, DA

Ohno, Y

Ohno, H

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] MacMaster Univ, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4L7, Canada

[3] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 9808577, Japan

来源：

INFRARED PHYSICS & TECHNOLOGY | 2001年 / 42卷 / 3-5期

关键词：

quantum-well infrared photodetector; dual band;

D O I：

10.1016/S1350-4495(01)00072-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present experimental results on quantum-well photodetectors for visible or near-infrared and middle- or far-infrared dual-band detection. We report on two types of devices based on (1) InGaAs/InP and (2) GaAs/AIGaAs quantum wells. In the first case, InGaAs/InP quantum-well infrared photodetectors (QWIPs) for both near and middle infrared spectra are shown. In the second case, large bandgap top contacts were used on standard GaAs/AlGaAs QWIPs so that visible light could reach the quantum-well region and be absorbed via interband transitions. Two large band gap top contacts were investigated, using a high Al fraction AlGaAs and a short period GaAs/AlAs superlattice. We evaluate and analyze the detector performance. We find that such devices are potentially useful for applications involving dual-band simultaneous detection and imaging. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：163 / 170

页数：8

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