Charge disproportionate molecular redox for discrete memristive and memcapacitive switching

被引：96

作者：

Goswami, Sreetosh ^{[1
,2
]}

Rath, Santi P. ^{[3
]}

Thompson, Damien ^{[4
]}

Hedstrom, Svante ^{[5
,13
]}

Annamalai, Meenakshi ^{[1
]}

Pramanick, Rajib ^{[3
]}

Ilic, B. Robert ^{[6
]}

Sarkar, Soumya ^{[2
]}

Hooda, Sonu ^{[1
]}

Nijhuis, Christian A. ^{[1
,7
,8
]}

Martin, Jens ^{[1
,8
,9
,14
]}

Williams, R. Stanley ^{[10
]}

Goswami, Sreebrata ^{[3
]}

Venkatesan, T. ^{[1
,2
,9
,11
,12
]}

机构：

[1] Natl Univ Singapore, NUSNNI NanoCore, Singapore, Singapore

[2] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore, Singapore

[3] IACS, Sch Chem Sci, Kolkata, India

[4] Univ Limerick, Bernal Inst, Dept Phys, Limerick, Ireland

[5] Stockholm Univ, Fysikum, Stockholm, Sweden

[6] Natl Inst Stand & Technol, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA

[7] Natl Univ Singapore, Dept Chem, Singapore, Singapore

[8] Natl Univ Singapore, Ctr Adv 2D Mat, Singapore, Singapore

[9] Natl Univ Singapore, Dept Phys, Singapore, Singapore

[10] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX USA

[11] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore, Singapore

[12] Natl Univ Singapore, Mat Sci & Engn Dept, Singapore, Singapore

[13] Svensk Karnbranslehantering, Solna, Sweden

[14] Leibniz Inst Kristallzuchtung, Mat Sci Dept, Berlin, Germany

来源：

NATURE NANOTECHNOLOGY | 2020年 / 15卷 / 05期

基金：

爱尔兰科学基金会;

关键词：

NONVOLATILE MEMORY DEVICE; OXIDE; CONTACT; TRANSITION; ADHESION; COMPLEX;

D O I：

10.1038/s41565-020-0653-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electronic symmetry breaking by charge disproportionation results in multifaceted changes in the electronic, magnetic and optical properties of a material, triggering ferroelectricity, metal/insulator transition and colossal magnetoresistance. Yet, charge disproportionation lacks technological relevance because it occurs only under specific physical conditions of high or low temperature or high pressure. Here we demonstrate a voltage-triggered charge disproportionation in thin molecular films of a metal-organic complex occurring in ambient conditions. This provides a technologically relevant molecular route for simultaneous realization of a ternary memristor and a binary memcapacitor, scalable down to a device area of 60 nm(2). Supported by mathematical modelling, our results establish that multiple memristive states can be functionally non-volatile, yet discrete-a combination perceived as theoretically prohibited. Our device could be used as a binary or ternary memristor, a binary memcapacitor or both concomitantly, and unlike the existing 'continuous state' memristors, its discrete states are optimal for high-density, ultra-low-energy digital computing. Charge disproportionation in thin molecular films of a metal-organic complex enables the realization of a ternary memristor and binary memcapacitor.

引用

页码：380 / +

页数：20

共 63 条

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