The effect of nanoscale nonuniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices

被引：13

作者：

Park, Hokyung ^{[1
]}

Jo, Minseok ^{[1
]}

Choi, Hyejung ^{[1
]}

Hasan, Musarrat ^{[1
]}

Choi, Rino ^{[2
]}

Kirsch, Paul D. ^{[3
]}

Kang, Chang Young ^{[3
]}

Lee, Byoung Hun ^{[3
]}

Kim, Tae-Wook ^{[1
]}

Lee, Takhee ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Inha Univ, Inchon 402751, South Korea

[3] SEMATECH, Austin, TX 78741 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期

关键词：

charge trapping; conducting atomic force microscopy (C-AFM); hafnium oxide; oxygen vacancy;

D O I：

10.1109/LED.2007.911992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To understand the influence of oxygen vacancies in HfO2 on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO2 with large-area device and conducting atomic force Microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various postdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO2. With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO2 nMOSFET.

引用

页码：54 / 56

页数：3

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