Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

被引：82
作者：
Zhu, Jie-Jie [1 ]
Ma, Xiao-Hua [1 ]
Xie, Yong [1 ]
Hou, Bin [1 ]
Chen, Wei-Wei [1 ]
Zhang, Jin-Cheng [2 ]
Hao, Yue [2 ]
机构：
[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 02期
基金：
中国国家自然科学基金;
关键词：
AlGaN/GaN; AlN; interface; metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs); plasma-enhanced atomic layer deposition (PEALD); transport properties; GAN; PASSIVATION; VOLTAGE;
D O I：
10.1109/TED.2014.2377781
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we demonstrated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with AlN gate dielectric grown by plasma-enhanced atomic layer deposition (PEALD). The high-quality interface of AlN/AlGaN/GaN MIS-HEMTs resulted in a very small threshold voltage (Vth) hysteresis and dispersion. Simultaneously, the MIS-HEMTs exhibited a high-peak transconductance of 289 mS/mm and a small Vth shift of 0.8 V, while those for Al2O3/AlGaN/GaN metal-oxide-semiconductor HEMTs were 203 mS/mm and 5.2 V, respectively. Furthermore, analysis indicated that PEALD-grown AlN significantly reduced the interface charges at dielectric/III-N interface (from 1.2 x10(13) to 8x10(12) cm(-2) eV(-1) for interface traps, and from 1.01x10(13) to 3.1 x 10(11) cm(-2) for fixed charges) and improved channel transport properties (the full-width at half-maximum of channel transconductance increased from 0.9 to 2.7 V), compared with ALD-grown Al2O3, which could explain the differences of device characteristics.
引用
收藏
页码：512 / 518
页数：7
相关论文
共 33 条
[1]  
[Anonymous], APPL PHYS LETT
[2]   Copper gate AlGaN/GaN HEMT with low gate leakage current [J].
Ao, JP ;
Kikuta, D ;
Kubota, N ;
Naoi, Y ;
Ohno, Y .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (08) :500-502
[3]  
Chen T.-S., 2006, TECH DIG INT C COMPO, P227
[4]   High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 [J].
Choi, Woojin ;
Seok, Ogyun ;
Ryu, Hojin ;
Cha, Ho-Young ;
Seo, Kwang-Seok .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (02) :175-177
[5]   Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors [J].
Deen, D. A. ;
Storm, D. F. ;
Bass, R. ;
Meyer, D. J. ;
Katzer, D. S. ;
Binari, S. C. ;
Lacis, J. W. ;
Gougousi, T. .
APPLIED PHYSICS LETTERS, 2011, 98 (02)
[6]  
Ganguly S., 2011, APPL PHYS LETT, V99
[7]   High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency [J].
Hao, Yue ;
Yang, Ling ;
Ma, Xiaohua ;
Ma, Jigang ;
Cao, Menyi ;
Pan, Caiyuan ;
Wang, Chong ;
Zhang, Jincheng .
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (05) :626-628
[8]   Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer [J].
Hsieh, Ting-En ;
Chang, Edward Yi ;
Song, Yi-Zuo ;
Lin, Yueh-Chin ;
Wang, Huan-Chung ;
Liu, Shin-Chien ;
Salahuddin, Sayeef ;
Hu, Chenming Calvin .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (07) :732-734
[9]   Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron Mobility Transistors [J].
Huang, Sen ;
Yang, Shu ;
Roberts, John ;
Chen, Kevin J. .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (11)
[10]   Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges [J].
Huang, Sen ;
Jiang, Qimeng ;
Yang, Shu ;
Tang, Zhikai ;
Chen, Kevin J. .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) :193-195
1234