ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

被引：2

作者：

Wang, X. J. ^{[2
]}

Tari, S. ^{[1
]}

Sporken, R. ^{[2
,3
]}

Sivananthan, S. ^{[2
]}

机构：

[1] Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey

[2] Univ Illinois, Dept Phys, Microphys Lab, Chicago, IL 60680 USA

[3] Fac Univ Notre Dame Paix, Lab Phys Mat Elect, B-5000 Namur, Belgium

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 08期

关键词：

Valence band offset; XPS; Strain; Intermixing; Epitaxy; MOLECULAR-BEAM-EPITAXY; STRAIN RELAXATION; ZNTE; INTERFACE; EPILAYERS; QUALITY; LAYER; GROWTH; GAAS; HETEROSTRUCTURES;

D O I：

10.1016/j.apsusc.2010.11.019

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs( 2 1 1) B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 +/- 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3346 / 3349

页数：4

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