ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

被引:2
作者
Wang, X. J. [2 ]
Tari, S. [1 ]
Sporken, R. [2 ,3 ]
Sivananthan, S. [2 ]
机构
[1] Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey
[2] Univ Illinois, Dept Phys, Microphys Lab, Chicago, IL 60680 USA
[3] Fac Univ Notre Dame Paix, Lab Phys Mat Elect, B-5000 Namur, Belgium
关键词
Valence band offset; XPS; Strain; Intermixing; Epitaxy; MOLECULAR-BEAM-EPITAXY; STRAIN RELAXATION; ZNTE; INTERFACE; EPILAYERS; QUALITY; LAYER; GROWTH; GAAS; HETEROSTRUCTURES;
D O I
10.1016/j.apsusc.2010.11.019
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs( 2 1 1) B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 +/- 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:3346 / 3349
页数:4
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