Generalized stacking fault energies and slip in β-tin

被引：20

作者：

Bhatia, M. A. ^{[1
]}

Adlakha, I. ^{[1
]}

Lu, G. ^{[2
]}

Solanki, K. N. ^{[1
]}

机构：

[1] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85281 USA

[2] Calif State Univ Northridge, Dept Phys & Astron, Northridge, CA 91330 USA

来源：

SCRIPTA MATERIALIA | 2016年 / 123卷

关键词：

Tin; Dislocation; Stacking fault energies; Density functional theory; DISLOCATION CORE; CRYSTAL ORIENTATION; SINGLE-CRYSTAL; SN-AG; SOLDER; DEFORMATION; ANISOTROPY; BEHAVIOR; PLASTICITY;

D O I：

10.1016/j.scriptamat.2016.05.038

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The preferential slip systems in beta-tin were investigated using density functional theory (DFT). The gamma surface entering dislocation modeling was calculated using DFF for three different nonequivalent slip systems in beta-tin. The generalized stacking fault energies (GSFE) of different slip systems led to the conclusion that the {100)<001] slip system is the most easily activated system. We also found that a full dislocation on the {101) and {100) planes will dissociate into a leading partial and a trailing partial. Overall, our study provides critical knowledge towards a comprehensive understanding of nonequivalent slip systems and subsequent deformation processes in beta-tin. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：21 / 25

页数：5

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