Advanced methods for the analysis of x-ray absorption spectroscopy data applied to semiconductors

被引：7

作者：

d'Acapito, Francesco ^{[1
]}

机构：

[1] GILDA CRG, ESRF, CNR IOM OGG, F-38043 Grenoble, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 06期

关键词：

BODY DISTRIBUTION-FUNCTIONS; FINE-STRUCTURE; LOCAL STRUCTURES; CONDENSED MATTER; INDUCED GROWTH; XANES SPECTRA; MN ATOMS; TEMPERATURE; SURFACE; SINGLE;

D O I：

10.1088/0268-1242/26/6/064004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-ray absorption spectroscopy (XAS) is an ideal technique for the investigation of the local structure in materials and in particular around dopant species in semiconducting crystals. This experimental technique permits the quantitative determination of structural parameters such as the bond distances and number of neighbors that are fundamental for understanding the incorporation site of the dopant in the matrix. The use of ab initio advanced methods for the simulation of atomic structures or XAS spectra has recently permitted a more complete interpretation of experimental data. Examples on the use of joint theoretical/experimental methods are given here as well as some perspectives for the future development of XAS data analysis.

引用

页数：8

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