Performance enhancement in mechanically stable flexible organic-field effect transistors with TIPS-pentacene:polymer blend

被引:47
作者
Raghuwanshi, Vivek [1 ]
Bharti, Deepak [1 ]
Varun, Ishan [1 ]
Mahato, Ajay Kumar [1 ]
Tiwari, Shree Prakash [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Jodhpur 342011, Rajasthan, India
关键词
Organic field-effect transistors (OFETs); Flexible; TIPS-pentacene crystal; Bending; Mechanical stability; Bias stress; THIN-FILM TRANSISTORS; CRYSTALLINE DOMAINS; CHARGE-TRANSPORT; SEMICONDUCTORS; MOBILITY;
D O I
10.1016/j.orgel.2016.04.039
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Flexible organic field-effect transistors (OFETs) with TIPS-pentacene: polystyrene (PS) blend are demonstrated to exhibit enhanced mobility and significantly improved electrical stability compared to neat TIPS-pentacene on poly(4-vinylphenol) (PVP) dielectric (bi-layer OFETs), along with high mechanical stability. Due to merit of high quality dielectric-semiconductor interface, pristine TIPS-pentacene: PS blend OFETs exhibited maximum mobility of 0.93 cm(2) V-1 s(-1) with average of 0.44(+/- 0.25) cm(2) V-1 s(-1) compared to 0.14(+/- 0.10) cm(2) V-1 s(-1) for bi-layer OFETs with high current on-off ratios on the order 10(5) for both. Both types of devices exhibited high electrical stability upon bending with increasing magnitude of strain or its duration up to 5 days. However, significant differences in electrical stability of devices were observed upon applying constant bias-stress for 40 min to 1 h. Pristine blend devices exhibited outstanding electrical stability with very low drain current decay of <5% compared to similar to 30% for bi-layer devices. Even upon bias-stress after 5 days of bending, the drain current decay levels were only changed to <10% and similar to 50% for blend and bi-layer devices respectively. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:284 / 288
页数:5
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