Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement

被引：29

作者：

Shalchian, Majid ^{[1
]}

Jazaeri, Farzan ^{[2
]}

Sallese, Jean-Michel ^{[3
]}

机构：

[1] Amirkabir Univ Technol, Elect Engn Dept, Tehran 158754413, Iran

[2] Ecole Polytech Fed Lausanne, Integrated Circuits Lab, CH-1015 Lausanne, Switzerland

[3] Ecole Polytech Fed Lausanne, Electron Device Modeling & Technol Lab, CH-1015 Lausanne, Switzerland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 09期

关键词：

Double-gate field-effect transistors (DGFETs); junctionless (JL) FETs; nanowire FETs; quantum well (OW); ultrathin body silicon on insulator (UTBSOI); DOUBLE-GATE MOSFETS; TRANSISTORS;

D O I：

10.1109/TED.2018.2854905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density. The analytical derivation relies on a first-order correction to the infinite quantum well. When restricting the analysis to the first and second quantized states, the free carrier charge distribution and the current in an ultrathin body JLDG FETs are in agreement with numerical TCAD simulations in all the regions of operation, i.e., from deep depletion to accumulation and from linear to saturation.

引用

页码：4009 / 4014

页数：6

共 16 条

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