A Wide-band and Good Gain Flatness Class AB Power Amplifier Design for Mobile Communication

被引：0
|
作者：
Kaplan, Aysegul [1 ]
Yuzer, Ahmet Hayrettin [1 ]
机构：
[1] Karabuk Univ, Elek & Elekt Muhendisligi Bolumu, Karabuk, Turkey
来源：
2017 25TH SIGNAL PROCESSING AND COMMUNICATIONS APPLICATIONS CONFERENCE (SIU) | 2017年
关键词：
power amplifier; communication system; 3G; 4G; ADS;
D O I：
暂无
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
In this study, Class AB power amplifier was designed for use 3G and 4G mobile communication systems. Agilennt EEsof ADS(Advanced Design System) program was used for the design. BLF621-10G model transistor of NXP company was used as active element and Murata brand of coils and capacitors was used as passive elements. As a result of the design, a power amplifier design and simulation with 200 MHz bandwidth at 2.1 GHz was realized. When the designed power amplifier is exited with 17.5 dBm input power, a stable and good gain flatness(+/- 0.36dBm swing in the 20dB dynamic range) was obtained by obtaining 38 dBm oputput power.
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页数：4
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