Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers

被引：1

作者：

Strittmatter, A. ^{[1
]}

Teepe, M. ^{[2
]}

Knollenberg, C. ^{[2
]}

Johnson, N. M. ^{[2
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Palo Alto Res Ctr Inc, Palo Alto, CA 94304 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 314卷 / 01期

关键词：

Metalorganic vapor phase epitaxy; Pendeoepitaxy; Semi-polar nitrides; Semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2010.09.064

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial lateral overgrowth is reported for semi-polar (Al,Ga)N(1 1 .2) layers. The mask pattern consisted of periodic stripes of SiO(2) oriented parallel to either the GaN[1 1 .0] or the GaN[1 1 .1] direction. Lateral growth occurred either along GaN[1 1 .1] or along GaN[1 1 .0]. For growth along the [1 1 .0] direction, coalescence was achieved for layer thicknesses > 4 mu m. However, planarization was not observed yielding extremely corrugated surfaces. For growth in [1 1 .1] direction, coalescence was delayed by a diminishing lateral growth rate. Growth of AlGaN during ELOG resulted in coalescence. Improvement in crystal quality of such buffer layers for the growth of InGaN/GaN quantum wells was confirmed by X-ray diffraction and photoluminescence spectroscopy. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1 / 4

页数：4

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