Microwave Dielectric Properties of Low Temperature Firing BaxCu2-xP2O7 Ceramics

被引：1

作者：

Wu, Xinguang ^{[1
]}

Wang, Hong ^{[1
]}

Zhou, Huanfu ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China

来源：

FERROELECTRICS | 2010年 / 407卷

关键词：

BaxCu2-xP2O7; ceramic; low sintering temperature; microwave dielectric properties;

D O I：

10.1080/00150193.2010.484675

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new kind of microwave dielectric ceramics of BaxCu2-xP2O7 with low sintering temperature was prepared by solid state reaction method. The densified temperatures of the sintered samples are range from 850 degrees C to 900 degrees C. The best microwave dielectric properties can be obtained in Ba1.5Cu0.5P2O7 ceramic sintered at 875 degrees C for 2hrs with permittivity of 7.1, Qxf value of 31,000GHz and TCF value of -51 ppm/degrees C. The microwave dielectric properties and low sintering temperatures of BaxCu2-xP2O7 ceramics make them a promising candidate for LTCC applications.

引用

页码：16 / 22

页数：7

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