A novel yellow-green emitting phosphor with hafnium silicon multiple rings structure for light-emitting diodes and field emission displays

被引:50
作者
Wei, Qi [1 ,2 ]
Ding, Jianyan [3 ]
Chen, Hang [1 ,2 ]
Zhang, Qiang [1 ,2 ]
Wang, Yuhua [1 ,2 ]
机构
[1] Lanzhou Univ, Minist Educ, Key Lab Special Funct Mat & Struct Design, Lanzhou, Peoples R China
[2] Lanzhou Univ, Natl & Local Joint Engn Lab Opt Convers Mat & Tec, Lanzhou, Peoples R China
[3] Longyan Univ, Coll Chem & Mat Sci, Longyan, Peoples R China
基金
中国国家自然科学基金;
关键词
Structural derivation; Phosphor; Na2HfSiO5:Eu2+; Photoluminescence; Cathodoluminescence; SOLID-SOLUTION PHOSPHORS; LUMINESCENCE PROPERTIES; CATHODOLUMINESCENCE PROPERTIES; CATION SUBSTITUTION; ENERGY-TRANSFER; PHOTOLUMINESCENCE; EU2+; EVOLUTION; DISCOVERY; NANORODS;
D O I
10.1016/j.cej.2019.123392
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
A novel yellow-green emitting phosphor Na2HfSiO5:Eu2+ is successfully synthesized through solid-state reaction for the first time. Under the 369 nm excitation, the Na2HfSiO5:Eu2+ phosphors exhibit a broad yellow emission peaking at 551 nm with FWHM about 100 nm. The Na2HfSiO5:Eu2+ phosphors exhibit the asymmetric emission peaks owing to the Eu2+ partial occupation of four different Na+ sites with different environment. The energy transfer between Eu2+ ions appears by dipole-dipole interaction. A WLED lamp with high Ra (90) and low CCT (3875 K) was obtained by combing Na2HfSiO5:Eu2+ with BaMgAl10O17:Eu2+ (BAM), CaAlSiN3:Eu2+ and n-UV chip (lambda(max) = 380 nm). Under the low voltage and current conditions, the phosphor exhibits perfect stability and excellent anti degradation performance. All these results suggest that Na2HfSiO5:Eu2+ phosphor would be a potential candidate for n-UV LED and FED applications.
引用
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页数:9
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